aod423/AOI423/aoy423 30v p-channel mosfet general description product summary v ds i d (at v gs = -20v) -70a r ds(on) (at v gs = -20v) < 6.2m w (< 6.7m w * ) r ds(on) (at v gs = -10v) < 8m w (< 8.5m w * ) 100% uis tested 100% r g tested aoy423 to-251b tube 4000 tube 4000 the aod423/AOI423/aoy423 uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. with the excellent thermal resistance of the dpak/ipak package, this device is well suited for high current load applications. -30v orderable part number package type form minimum order q uantity aod423 to-252 AOI423 to-251a tape & reel 2500 to252 dpak top view bottom view g s d g s d g ds g g d d s s top view bottom view d d to-251a ipak to251b (ipak short lead) symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc * package to251a, to251b aoy423 to-251b tube 4000 maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.9 50 1.6 w power dissipation a p dsm w t a =70c a t a =25c i dsm a t a =70c -200 pulsed drain current c continuous drain current g i d -70 -67 t c =25c t c =100c v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted avalanche energy l=0.1mh c mj avalanche current c -12 a 125 -50 v 25 gate-source voltage drain-source voltage -30 continuous drain current -15 c thermal characteristics units maximum junction-to-ambient a c/w r q ja 16 41 20 parameter typ max t c =25c 2.5 45 t c =100c junction and storage temperature range -55 to 175 power dissipation b p d 90 1.6 t a =25c rev.1.0: august 2014 www.aosmd.com page 1 of 6
symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.5 -2.5 -3.5 v i d(on) -200 a 5.1 6.2 t j =125c 7.6 9.2 g fs 42 s v sd -0.7 -1 v i s -70 a c iss 2760 pf c oss 550 pf c rss 375 pf r g 1.5 3 6.0 w q 45 65 nc electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-20v, i d =-20a forward transconductance diode forward voltage v gs =-10v, i d =-20a to252 i s =-1a,v gs =0v i dss r ds(on) v gs =-20v, i d =-20a to251a, to251b v gs =0v, v ds =-15v, f=1mhz switching parameters zero gate voltage drain current gate-body leakage current on state drain current static drain-source on-resistance vgs=-10v, id=-20a to251a, to251b 6.7 8.5 m a v ds =v gs i d =-250 m a v ds =0v, v gs = 25v m w to252 6.2 8 m w reverse transfer capacitance m w m w 5.6 6.7 v ds =-5v, i d =-20a maximum body-diode continuous current g input capacitance output capacitance dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge q g 45 65 nc q gs 10 nc q gd 12 nc t d(on) 13 ns t r 23 ns t d(off) 35 ns t f 26 ns t rr 15 ns q rr 30 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =-20a, di/dt=500a/ m s v gs =-10v, v ds =-15v, r l =0.75 w , r gen =3 w turn-off delaytime body diode reverse recovery charge i f =-20a, di/dt=500a/ m s turn-on delaytime turn-on rise time turn-off fall time total gate charge v gs =-10v, v ds =-15v, i d =-20a gate source charge gate drain charge a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev.1.0: august 2014 www.aosmd.com page 2 of 6
typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 0 5 10 15 20 25 30 r ds(on) (m w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-10v i d =-20a v gs =-20v i d =-20a 25 c 125 c v ds =-5v v gs =-10v v gs =-20v 0 20 40 60 80 100 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-4v -4.5v -6v -10v -5v 18 40 gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 0 5 10 15 20 r ds(on) (m w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-20a 25 c 125 c rev.1.0: august 2014 www.aosmd.com page 3 of 6
typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 80 160 240 320 400 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - c oss c rss v ds =-15v i d =-20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 40 figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 9: maximum forward biased safe operating area (note f) r q jc =1.6 c/w rev.1.0: august 2014 www.aosmd.com page 4 of 6
typical electrical and thermal characteristics 0 18 0 30 60 90 120 150 0 25 50 75 100 125 150 175 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c 10.0 100.0 1000.0 1 10 100 1000 -i ar (a) peak avalanche current time in avalanche, t a (ms) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t case ( c) figure 14: current de-rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =50 c/w rev.1.0: august 2014 www.aosmd.com page 5 of 6
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v id vds unclamped inductive switching (uis) test circuit & waveforms vds l 2 e = 1/2 li ar ar vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs id vgs rg dut vdc vgs id vgs - + bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev.1.0: august 2014 www.aosmd.com page 6 of 6
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